OXIDE FILMS ON BETA-SILICON/CARBIDE

被引:7
作者
BARTLETT, RW
机构
关键词
D O I
10.1149/1.2408060
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:397 / +
页数:1
相关论文
共 16 条
[2]  
ATALLA MM, 1960, PROPERTIES ELEMENTAL, P163
[3]   AN INVESTIGATION OF THE OPTICAL PROPERTIES AND THE GROWTH OF OXIDE FILMS ON SILICON [J].
CLAUSSEN, BH ;
FLOWER, M .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (09) :983-987
[6]  
DEAL BE, 1963, PRIVATE COMMUNICATIO
[7]   INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].
GROVE, AS ;
DEAL, BE ;
SNOW, EH ;
SAH, CT .
SOLID-STATE ELECTRONICS, 1965, 8 (02) :145-+
[8]   EFFECT OF AN ELECTRIC FIELD ON SILICON OXIDATION [J].
JORGENSEN .
JOURNAL OF CHEMICAL PHYSICS, 1962, 37 (04) :874-&
[9]   OXIDATION OF SILICON CARBIDE [J].
JORGENSEN, PJ ;
WADSWORTH, ME ;
CUTLER, IB .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1959, 42 (12) :613-616
[10]   EFFECTS OF WATER VAPOR ON OXIDATION OF SILICON CARBIDE [J].
JORGENSEN, PJ ;
WADSWORTH, ME ;
CUTLER, IB .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1961, 44 (06) :258-261