HIGH-RATE SPUTTERING TECHNIQUES

[1] PREPARATION OF TITANIUM NITRIDE BY A PULSED DC MAGNETRON REACTIVE DEPOSITION TECHNIQUE USING THE MOVING MODE OF DEPOSITION [J]. THIN SOLID FILMS, 1980, 72 (03) : 535 - 540

[2] PLASMA SHEATH FORMATION BY RADIO-FREQUENCY FIELDS [J]. PHYSICS OF FLUIDS, 1963, 6 (09) : 1346 - 1355

[3] CHAMBERS DL, 1979, COMMUNICATION

[4] Chapman B, 1980, GLOW DISCHARGE PROCE, P139

[5] POSITIVE-ION BOMBARDMENT OF SUBSTRATES IN RF DIODE GLOW-DISCHARGE SPUTTERING [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) : 4965 - 4971

[6] CRASTON JL, 1958, 2ND P INT C PEAC US, V32, P414

[7] HIGH-RATE SPUTTER DEPOSITION - CIRCULAR MAGNETRONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 178 - 178

[8] GRUBB AD, 1979, COMMUNICATION

[9] IMPORTANCE OF INSULATING INCLUSIONS IN ARC INITIATION [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1960, 11 (10): : 468 - 471

[10] COMPRESSIVE STRESS AND INERT-GAS IN MO FILMS SPUTTERED FROM A CYLINDRICAL POST MAGNETRON WITH NE, AR, KR, AND XE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01): : 380 - 383

[1] PREPARATION OF TITANIUM NITRIDE BY A PULSED DC MAGNETRON REACTIVE DEPOSITION TECHNIQUE USING THE MOVING MODE OF DEPOSITION [J]. THIN SOLID FILMS, 1980, 72 (03) : 535 - 540

[2] PLASMA SHEATH FORMATION BY RADIO-FREQUENCY FIELDS [J]. PHYSICS OF FLUIDS, 1963, 6 (09) : 1346 - 1355

[3] CHAMBERS DL, 1979, COMMUNICATION

[4] Chapman B, 1980, GLOW DISCHARGE PROCE, P139

[5] POSITIVE-ION BOMBARDMENT OF SUBSTRATES IN RF DIODE GLOW-DISCHARGE SPUTTERING [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) : 4965 - 4971

[6] CRASTON JL, 1958, 2ND P INT C PEAC US, V32, P414

[7] HIGH-RATE SPUTTER DEPOSITION - CIRCULAR MAGNETRONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 178 - 178

[8] GRUBB AD, 1979, COMMUNICATION

[9] IMPORTANCE OF INSULATING INCLUSIONS IN ARC INITIATION [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1960, 11 (10): : 468 - 471

[10] COMPRESSIVE STRESS AND INERT-GAS IN MO FILMS SPUTTERED FROM A CYLINDRICAL POST MAGNETRON WITH NE, AR, KR, AND XE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01): : 380 - 383