(ALGA) AS GROWN BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY USING A N2 CARRIER

We have studied the growth of AlxGa1-xAs (0.24 < x < 0.34 ) using a N2 carrier in low pressure metalorganic vapor phase epitaxy. Growth temperature, gas velocity, and V/III ratio were varied to achieve optimum growth conditions. Layers with excellent morphology and electrical and optical properties comparable to samples grown using standard conditions (with a H-2 carrier) can be deposited in a nitrogen ambient. Al0.24Ga0.76As bulk material grown on an buffer layer with a background doping of 1.3 x 10(16) cm-3 showed Hall mobilities of 4500 and 2300 cm2/Vs at 77 and 300K. Photoluminescence studies at 2K revealed strong bound exciton transitions with a full width at half maximum of 5.2 meV for Al0.29Ga0.71As.