EXTENDED DEFECT EVOLUTION IN BORON-IMPLANTED SI DURING RAPID THERMAL ANNEALING AND ITS EFFECTS ON THE ANOMALOUS BORON-DIFFUSION

被引：17

作者：

KIM, YM ^{[1
]}

LO, GQ ^{[1
]}

KWONG, DL ^{[1
]}

TASCH, AF ^{[1
]}

NOVAK, S ^{[1
]}

机构：

[1] CHARLES EVANS & ASSOCIATES,REDWOOD CITY,CA 94063

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 13期

关键词：

D O I：

10.1063/1.102529

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Effects of extended defect evolution on the anomalous diffusion of ion-implanted boron during rapid thermal annealing (RTA) have been studied using transmission electron microscopy and secondary-ion mass spectroscopy. It has been found that for low-dose boron implants (<1×101 4 cm-2), no extended defects can be observed after RTA at 1000°C, and the anomalous diffusion saturates within less than 10 s. However, extended defects are developed for high-dose boron implants (>5×1014 cm-2), and the anomalous diffusion persists for a much longer time and is dose dependent. Extended defect evolution has been characterized and correlated with the observed anomalous boron diffusion behaviors.

引用

页码：1254 / 1256

页数：3

共 11 条

[1] TEMPERATURE AND TIME-DEPENDENCE OF DOPANT ENHANCED DIFFUSION IN SELF-ION IMPLANTED SILICON [J].