ANOMALOUS TRANSIENT DIFFUSION OF ION-IMPLANTED DOPANTS - A PHENOMENOLOGICAL MODEL

被引:36
作者
MICHEL, AE
机构
关键词
D O I
10.1016/0168-583X(89)90207-3
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:379 / 383
页数:5
相关论文
共 28 条
[1]   POINT-DEFECT DOPANT DIFFUSION CONSIDERATIONS FOLLOWING PREAMORPHIZATION OF SILICON VIA SI+ AND GE+ IMPLANTATION [J].
AJMERA, AC ;
ROZGONYI, GA ;
FAIR, RB .
APPLIED PHYSICS LETTERS, 1988, 52 (10) :813-815
[2]   ELIMINATION OF END-OF-RANGE AND MASK EDGE LATERAL DAMAGE IN GE+ PREAMORPHIZED, B+ IMPLANTED SI [J].
AJMERA, AC ;
ROZGONYI, GA .
APPLIED PHYSICS LETTERS, 1986, 49 (19) :1269-1271
[3]   TRANSIENT ENHANCED DIFFUSION OF DOPANTS IN SILICON INDUCED BY IMPLANTATION DAMAGE [J].
ANGELUCCI, R ;
NEGRINI, P ;
SOLMI, S .
APPLIED PHYSICS LETTERS, 1986, 49 (21) :1468-1470
[4]  
CEMBALI F, 1986, PHYS STATUS SOLIDI A, V94, P588
[5]   TRANSIENT ENHANCED DIFFUSION DURING RAPID THERMAL ANNEALING OF BORON IMPLANTED SILICON [J].
CHO, K ;
NUMAN, M ;
FINSTAD, TG ;
CHU, WK ;
LIU, J ;
WORTMAN, JJ .
APPLIED PHYSICS LETTERS, 1985, 47 (12) :1321-1323
[6]  
DROWLWY CI, 1985, MATER RES SOC S P, V35, P375
[7]   KINETICS OF THERMAL NITRIDATION PROCESSES IN THE STUDY OF DOPANT DIFFUSION MECHANISMS IN SILICON [J].
FAHEY, P ;
BARBUSCIA, G ;
MOSLEHI, M ;
DUTTON, RW .
APPLIED PHYSICS LETTERS, 1985, 46 (08) :784-786
[8]   MODELING RAPID THERMAL-DIFFUSION OF ARSENIC AND BORON IN SILICON [J].
FAIR, RB ;
WORTMAN, JJ ;
LIU, J .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) :2387-2394
[9]   ENHANCED TAIL DIFFUSION OF ION-IMPLANTED BORON IN SILICON [J].
FAN, D ;
HUANG, J ;
JACCODINE, RJ ;
KAHORA, P ;
STEVIE, F .
APPLIED PHYSICS LETTERS, 1987, 50 (24) :1745-1747
[10]   STUDIES ON THE LATTICE POSITION OF BORON IN SILICON [J].
FINK, D ;
BIERSACK, JP ;
CARSTANJEN, HD ;
JAHNEL, F ;
MULLER, K ;
RYSSEL, H ;
OSEI, A .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1983, 77 (1-2) :11-33