DECORATION OF DEFECTS IN SILICON WITH GOLD, AND RELATED SUBJECTS

被引：23

作者：

STOLWIJK, NA

HOLZL, J

FRANK, W

HAUBER, J

MEHRER, H

机构：

[1] MAX PLANCK INST MET RES, INST PHYS, D-7000 STUTTGART 80, FED REP GER

[2] UNIV STUTTGART, INST THEORET & ANGEW PHYS, D-7000 STUTTGART 80, FED REP GER

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1987年 / 104卷 / 01期

关键词：

D O I：

10.1002/pssa.2211040117

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：225 / 245

页数：21

共 33 条

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[28] DIFFUSION OF GOLD IN DISLOCATION-FREE OR HIGHLY DISLOCATED SILICON MEASURED BY THE SPREADING-RESISTANCE TECHNIQUE [J].

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[29] DIFFUSION AND SOLUBILITY OF GOLD IN SILICON [J].

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