MEASUREMENTS OF DEFECTS AND STRAIN IN SOS FILMS AFTER CW AR LASER ANNEALING IN THE LIQUID-PHASE REGIME

被引：10

作者：

GOLECKI, I

GLASS, HL

KINOSHITA, G

MAGEE, TJ

机构：

[1] ADV RES & APPLICAT CORP,SUNNYVALE,CA 94086

[2] CALTECH,PASADENA,CA 91125

来源：

APPLIED SURFACE SCIENCE | 1981年 / 9卷 / 1-4期

关键词：

D O I：

10.1016/0378-5963(81)90044-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：299 / 314

页数：16

共 21 条

[1]

ALESTIG G, 1978, SEP P INT C ION BEAM, P211

[2]

GAT A, 1979, CW LASER ANNEALING I, P33

[3] FURNACE AND CW AR LASER-INDUCED SOLID-PHASE EPITAXIAL REGROWTH OF SOS FILMS IMPLANTED WITH SI, SI + B, P, AND P + B IONS [J].

GOLECKI, I ;

KINOSHITA, G ;

PAINE, BM .

NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :675-682

[4]

GOLECKI I, 1981, APPL PHYS LETT, V38, P648, DOI 10.1063/1.92513

[5] IMPROVEMENT OF CRYSTALLINE QUALITY OF EPITAXIAL SILICON-ON-SAPPHIRE BY ION-IMPLANTATION AND FURNACE REGROWTH [J].

GOLECKI, I ;

NICOLET, MA .

SOLID-STATE ELECTRONICS, 1980, 23 (07) :803-806

[6] RECRYSTALLIZATION OF SILICON-ON-SAPPHIRE BY CW AR LASER IRRADIATION - COMPARISON BETWEEN THE SOLID-PHASE AND THE LIQUID-PHASE REGIMES [J].

GOLECKI, I ;

KINOSHITA, G ;

GAT, A ;

PAINE, BM .

APPLIED PHYSICS LETTERS, 1980, 37 (10) :919-921

[7] ELECTRONIC EFFECTS IN ELASTIC CONSTANTS OF N-TYPE SILICON [J].

HALL, JJ .

PHYSICAL REVIEW, 1967, 161 (03) :756-&

[8] DIRECT OBSERVATION OF STRUCTURE OF THIN, COMMERCIALLY USEFUL SILICON ON SAPPHIRE FILMS BY CROSS-SECTION TRANSMISSION ELECTRON-MICROSCOPY [J].

HAM, WE ;

ABRAHAMS, MS ;

BUIOCCHI, CJ ;

BLANC, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (04) :634-636

[9] CRYSTALLINE DISORDER REDUCTION AND DEFECT-TYPE CHANGE IN SILICON ON SAPPHIRE FILMS BY SILICON IMPLANTATION AND SUBSEQUENT THERMAL ANNEALING [J].

INOUE, T ;

YOSHII, T .

APPLIED PHYSICS LETTERS, 1980, 36 (01) :64-66

[10] IMPROVEMENT OF CRYSTALLINE QUALITY OF EPITAXIAL SI LAYERS BY ION-IMPLANTATION TECHNIQUES [J].

LAU, SS ;

MATTESON, S ;

MAYER, JW ;

REVESZ, P ;

GYULAI, J ;

ROTH, J ;

SIGMON, TW ;

CASS, T .

APPLIED PHYSICS LETTERS, 1979, 34 (01) :76-78

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