ANALYSIS OF SOLID-PHASE CRYSTALLIZATION IN AMORPHIZED POLYCRYSTALLINE SI FILMS ON QUARTZ SUBSTRATES

被引:49
作者
NAKAMURA, A
EMOTO, F
FUJII, E
YAMAMOTO, A
UEMOTO, Y
SENDA, K
KANO, G
机构
关键词
D O I
10.1063/1.343965
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:4248 / 4251
页数:4
相关论文
共 15 条
[1]   SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J].
CSEPREGI, L ;
KENNEDY, EF ;
MAYER, JW ;
SIGMON, TW .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3906-3911
[2]   A NEW TECHNIQUE FOR OBSERVING THE AMORPHOUS TO CRYSTALLINE TRANSFORMATION IN THIN SURFACE-LAYERS ON SILICON-WAFERS [J].
DROSD, B ;
WASHBURN, J .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) :4106-4110
[3]   SOME OBSERVATIONS ON THE AMORPHOUS TO CRYSTALLINE TRANSFORMATION IN SILICON [J].
DROSD, R ;
WASHBURN, J .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :397-403
[4]  
Emoto F., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P878, DOI 10.1109/IEDM.1988.32950
[5]  
FUJII E, 1987, IEDM, P448
[6]   PROPAGATION MECHANISM OF GERMANIUM DENDRITES [J].
HAMILTON, DR ;
SEIDENSTICKER, RG .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (07) :1165-1168
[7]  
HAYASHI Y, 1988, IEEE INT SOLID STATE, P266
[8]   LATERAL SOLID-PHASE EPITAXY OF AMORPHOUS SI FILMS ON SI SUBSTRATES WITH SIO2 PATTERNS [J].
ISHIWARA, H ;
YAMAMOTO, H ;
FURUKAWA, S ;
TAMURA, M ;
TOKUYAMA, T .
APPLIED PHYSICS LETTERS, 1983, 43 (11) :1028-1030
[9]   DOSE DEPENDENCE OF CRYSTALLIZATION IN IMPLANTED POLYCRYSTALLINE SILICON FILMS ON SIO2 [J].
IVERSON, RB ;
REIF, R .
APPLIED PHYSICS LETTERS, 1988, 52 (08) :645-647
[10]   CHARACTERISTICS OF MOSFETS ON LARGE-GRAIN POLYSILICON FILMS [J].
KATOH, T .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (07) :923-928