LASER ABLATIVE CHEMICAL ETCHING OF SIO2

被引：10

作者：

AGRAWALLA, BS

DAI, BT

ALLEN, SD

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 02期

关键词：

D O I：

10.1116/1.583956

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：601 / 605

页数：5

共 35 条

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