GAAS(100) SUBSTRATE CLEANING BY THERMAL ANNEALING IN HYDROGEN

被引：17

作者：

BERNSTEIN, RW ^{[1
]}

GREPSTAD, JK ^{[1
]}

机构：

[1] ELAB,N-7034 TRONDHEIM,NORWAY

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1116/1.575893

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：581 / 584

页数：4

共 16 条

[1] DAMAGE AND CONTAMINATION-FREE GAAS AND ALGAAS ETCHING USING A NOVEL ULTRAHIGH-VACUUM REACTIVE ION-BEAM ETCHING SYSTEM WITH ETCHED SURFACE MONITORING AND CLEANING METHOD [J].

ASAKAWA, K ;

SUGATA, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :677-680

[2]

BERNSTEIN RW, IN PRESS SURF INTERF

[3] X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF GAAS (001) AND INP (001) CLEANING PROCEDURES PRIOR TO MOLECULAR-BEAM EPITAXY [J].

CONTOUR, JP ;

MASSIES, J ;

SALETES, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (07) :L563-L565

[4] AN XPS STUDY OF THE PASSIVATING OXIDE LAYER PRODUCED ON GAAS(001) SUBSTRATE BY HEATING IN AIR ABOVE 200-DEGREES-C [J].

CONTOUR, JP ;

MASSIES, J ;

FRONIUS, H ;

PLOOG, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (02) :L167-L169

[5]

Fadley C. S., 1978, ELECT SPECTROSC THEO, V2, P1

[6] ELECTRON-ESCAPE DEPTHS IN GERMANIUM [J].

GANT, H ;

MONCH, W .

SURFACE SCIENCE, 1981, 105 (01) :217-224

[7] EFFECT OF GAAS OR GAXAL1-XAS OXIDE COMPOSITION ON SCHOTTKY-BARRIER BEHAVIOR [J].

GARNER, CM ;

SU, CY ;

SAPERSTEIN, WA ;

JEW, KG ;

LEE, CS ;

PEARSON, GL ;

SPICER, WE .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3376-3382

[8] CHARACTERIZATION OF SURFACE OXIDES AND OXIDE DESORPTION ON INGAAS [J].

INGREY, SIJ ;

LAU, WM ;

SODHI, RNS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03) :1554-1557

[9] THE OXIDATION OF GAAS(110) - A REEVALUATION [J].

LANDGREN, G ;

LUDEKE, R ;

JUGNET, Y ;

MORAR, JF ;

HIMPSEL, FJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :351-358

[10] SUBSTRATE CHEMICAL ETCHING PRIOR TO MOLECULAR-BEAM EPITAXY - AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF GAAS (001) SURFACES ETCHED BY THE H2SO4-H2O2-H2O SOLUTION [J].

MASSIES, J ;

CONTOUR, JP .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) :806-810

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