CALCULATIONS OF THE ELECTRONIC-PROPERTIES OF HYDROGENATED SILICON

被引:104
作者
PAPACONSTANTOPOULOS, DA [1 ]
ECONOMOU, EN [1 ]
机构
[1] UNIV CRETE,CRETE,GREECE
来源
PHYSICAL REVIEW B | 1981年 / 24卷 / 12期
关键词
D O I
10.1103/PhysRevB.24.7233
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:7233 / 7246
页数:14
相关论文
共 53 条
[1]  
ALDER D, 1978, PHYS REV LETT, V41, P1755
[2]  
ALLAN DC, 1980, PHYS REV LETT, V44, P43, DOI 10.1103/PhysRevLett.44.43
[3]   SELF-CONSISTENT GREENS FUNCTION CALCULATION OF IDEAL SI VACANCY [J].
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW LETTERS, 1978, 41 (13) :892-895
[4]   NEW SELF-CONSISTENT APPROACH TO THE ELECTRONIC-STRUCTURE OF LOCALIZED DEFECTS IN SOLIDS [J].
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1979, 19 (10) :4965-4979
[5]   SILICON VACANCY - POSSIBLE ANDERSON NEGATIVE-U SYSTEM [J].
BARAFF, GA ;
KANE, EO ;
SCHLUTER, M .
PHYSICAL REVIEW LETTERS, 1979, 43 (13) :956-959
[6]   SELF-CONSISTENT METHOD FOR POINT-DEFECTS IN SEMICONDUCTORS - APPLICATION TO VACANCY IN SILICON [J].
BERNHOLC, J ;
LIPARI, NO ;
PANTELIDES, ST .
PHYSICAL REVIEW LETTERS, 1978, 41 (13) :895-899
[7]   SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .2. SELF-CONSISTENT FORMULATION AND APPLICATION TO THE VACANCY IN SILICON [J].
BERNHOLC, J ;
LIPARI, NO ;
PANTELIDES, ST .
PHYSICAL REVIEW B, 1980, 21 (08) :3545-3562
[8]  
BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556
[9]   HYDROGEN-ASSOCIATED DISORDER MODES IN AMORPHOUS SI-H FILMS [J].
CARLOS, WE ;
TAYLOR, PC .
PHYSICAL REVIEW LETTERS, 1980, 45 (05) :358-362
[10]   LOCALIZED-ORBITAL DESCRIPTION OF WAVE-FUNCTIONS AND ENERGY-BANDS IN SEMICONDUCTORS [J].
CHADI, DJ .
PHYSICAL REVIEW B, 1977, 16 (08) :3572-3578