STABILITY OF PLASMA-DEPOSITED SIO2-FILMS EVALUATED USING STRESS AND IR MEASUREMENTS

被引：22

作者：

GOKAN, H

MORIMOTO, A

MURAHATA, M

机构：

来源：

THIN SOLID FILMS | 1987年 / 149卷 / 01期

关键词：

D O I：

10.1016/0040-6090(87)90251-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：85 / 94

页数：10

共 23 条

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[5]

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[7]

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[9]

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[10] ROOM-TEMPERATURE GLOW-DISCHARGE DEPOSITION OF SILICON-OXIDES FROM SIH4 AND N2O [J].

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