A SELF-ALIGNED GATE LIGHTLY DOPED DRAIN (AL,GA)AS/GAAS MODFET

被引：3

作者：

AKINWANDE, AI

TAN, KL

CHEN, CH

VOLD, PJ

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 06期

关键词：

D O I：

10.1109/55.715

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：275 / 277

页数：3

共 13 条

[1] MODULATION-DOPED FET THRESHOLD VOLTAGE UNIFORMITY OF A HIGH THROUGHPUT 3 INCH MBE SYSTEM [J].

ABROKWAH, JK ;

CIRILLO, NC ;

HELIX, MJ ;

LONGERBONE, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02) :252-255

[2]

ASAI S, 1986, 18TH C SOL STAT DEV, P383

[3]

CIRILLO NC, 1984 P IEEE GAAS IC, P167

[4] GATE DRAIN AVALANCHE BREAKDOWN IN GAAS POWER MESFETS [J].

DAVID, JPR ;

SITCH, JE ;

STERN, MS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (10) :1548-1552

[5]

DEGRAAF K, 1986 P GAAS IC S, P205

[6] GAAS POWER MESFETS WITH A GRADED RECESS STRUCTURE [J].

FURUTSUKA, T ;

HIGASHISAKA, A ;

AONO, Y ;

TAKAYAMA, Y ;

HASEGAWA, F .

ELECTRONICS LETTERS, 1979, 15 (14) :417-418

[7] IMPROVEMENT OF DRAIN BREAKDOWN VOLTAGE OF GAAS POWER MESFETS BY A SIMPLE RECESS STRUCTURE [J].

FURUTSUKA, T ;

TSUJI, T ;

HASEGAWA, F .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) :563-567

[8] THE EFFECT OF ANNEALING ON THE ELECTRICAL-PROPERTIES OF SELECTIVELY DOPED GAAS/N-ALGAAS HETEROJUNCTION STRUCTURES GROWN BY MBE [J].

ISHIKAWA, T ;

HIYAMIZU, S ;

MIMURA, T ;

SAITO, J ;

HASHIMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) :L814-L816

[9]

MURAGUCHI M, 1986, 18TH C SOL STAT DEV, P379

[10]

SHIMURA T, 1986, 18TH C SOL STAT DEV, P387

← 1 2 →