THE PERFORMANCE AND RELIABILITY OF 0.4 MICRON MOSFETS WITH GATE OXYNITRIDES GROWN BY RAPID THERMAL-PROCESSING USING MIXTURES OF N2O AND O2

被引：55

作者：

OKADA, Y ^{[1
]}

TOBIN, PJ ^{[1
]}

RUSHBROOK, P ^{[1
]}

DEHART, WL ^{[1
]}

机构：

[1] PEAK SYST INC,FREMONT,CA 94538

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 02期

关键词：

D O I：

10.1109/16.277380

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We studied the effect of interfacial nitrogen concentration on device characteristics with gate oxynitrides grown from mixtures of N2O and O2 by rapid thermal processing. The performance and reliability of MOS capacitors fabricated by a four mask process and MOSFET's fabricated by a 0.4mum twin-well process were examined. No degradation of the current drive of n-and p-MOSFET's in the linear and the saturation region was observed due to oxynitridation. The reliability of gate dielectrics represented by charge-to-breakdown for substrate injection and hot carrier immunity of n-MOSFET's is improved with increasing interfacial nitrogen concentration.

引用

页码：191 / 197

页数：7

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