PROPERTIES OF TITANIUM-TUNGSTEN THIN-FILMS OBTAINED BY MAGNETRON SPUTTERING OF COMPOSITE CAST TARGETS

被引:32
作者
GLEBOVSKY, VG [1 ]
YASCHAK, VY [1 ]
BARANOV, VV [1 ]
SACKOVICH, EL [1 ]
机构
[1] MINSK RADIOTECH INST, MINSK 220069, BELARUS
关键词
SCHOTTKY BARRIER; SPUTTERING; TITANIUM; TUNGSTEN;
D O I
10.1016/0040-6090(94)06326-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
TiW films, prepared by magnetron sputtering of highly pure cast tungsten and titanium, were studied. Auger electron spectroscopy (AES) data showed that the Ti/W ratio in the TiW films was nearly constant during the sputtering lifetime of the composite targets. The TiW films were solid solutions of titanium in a tungsten matrix with increased tungsten lattice parameters. It was shown that the relative increase in the tungsten lattice parameters depended on the condition of the silicon substrate or sublayers on which the films were deposited. The TiW layers influenced the preparation conditions of the nucleation and growth of aluminium films, which were characterized by a highly dispersed microstructure.
引用
收藏
页码:1 / 6
页数:6
相关论文
共 9 条
[1]   TITANIUM-TUNGSTEN CONTACTS TO SILICON .2. STABILITY AGAINST ALUMINUM PENETRATION [J].
BABCOCK, SE ;
TU, KN .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (05) :1599-1605
[2]  
BARANOV VV, 1989, POVERKHNOST, V2, P84
[3]  
CHEN JR, 1982, S INTERFACES CONTACT, P25
[4]  
GLEBOVSKY VG, 1993, 13TH P INT PLANS SEM, V1, P190
[5]  
GLEBOVSKY VG, 1994, J MATER LETT, V21, P89
[6]   INTERNAL-STRESSES IN CR, MO, TA, AND PT FILMS DEPOSITED BY SPUTTERING FROM A PLANAR MAGNETRON SOURCE [J].
HOFFMAN, DW ;
THORNTON, JA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :355-358
[7]   REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J].
MURARKA, SP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04) :775-792
[8]   DIFFUSION BARRIER PROPERTIES OF TIW BETWEEN SI AND CU [J].
WANG, SQ ;
SUTHAR, S ;
HOEFLICH, C ;
BURROW, BJ .
JOURNAL OF APPLIED PHYSICS, 1993, 73 (05) :2301-2320
[9]   FABRICATION OF HIGHLY RELIABLE TUNGSTEN GATE MOS VLSIS [J].
YAMAMOTO, N ;
KUME, H ;
IWATA, S ;
YAGI, K ;
KOBAYASHI, N ;
MORI, N ;
MIYAZAKI, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (02) :401-407