DIFFUSION BARRIER PROPERTIES OF TIW BETWEEN SI AND CU

被引：149

作者：

WANG, SQ ^{[1
]}

SUTHAR, S ^{[1
]}

HOEFLICH, C ^{[1
]}

BURROW, BJ ^{[1
]}

机构：

[1] SIGNET CO, MAT ANAL GRP, SUNNYVALE, CA 94088 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 05期

关键词：

D O I：

10.1063/1.353135

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

100-nm-thick TiW (30 at. % Ti) films were used as diffusion barriers between silicon substrates and thin Cu films. Sheet resistance measurements, Rutherford backscattering spectrometry, Auger electron spectroscopy, transmission electron microscopy, scanning electron microscopy, and x-ray diffractometry indicated the absence of interdiffusion and structural change for unpatterned Si/TiW/Cu samples up to 775-degrees-C if there was no exposure to air between TiW and Cu deposition and 850-degrees-C if there was an exposure, respectively. Leakage current measurements showed no deterioration of diode junctions up to 725-degrees-C for TiW without air exposure and 775-degrees-C for air-exposed TiW.

引用

页码：2301 / 2320

页数：20

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