CARRIER CONCENTRATION AND HALL-MOBILITY IN HEAVILY ARSENIC-DIFFUSED SILICON

被引：8

作者：

MATSUMOTO, S ^{[1
]}

NIIMI, T ^{[1
]}

MUROTA, J ^{[1
]}

ARAI, E ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 07期

关键词：

D O I：

10.1149/1.2129969

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1650 / 1652

页数：3

共 9 条

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[3] DIFFUSION OF ION-IMPLANTED ARSENIC IN SILICON [J].

FAIR, RB ;

TSAI, JCC .

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[4] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].

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[5] ION IMPLANTATION OF SILICON .2. ELECTRICAL EVALUATION USING HALL-EFFECT MEASUREMENTS [J].

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MARSH, OJ ;

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BARON, R .

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[6] ELECTRICAL AND BACKSCATTERING MEASUREMENTS OF ARSENIC IMPLANTED SILICON [J].

MULLER, H ;

KRANZ, H ;

RYSSEL, H ;

SCHMID, K .

APPLIED PHYSICS, 1974, 4 (02) :115-123

[7] RELATIONSHIP BETWEEN TOTAL ARSENIC AND ELECTRICALLY ACTIVE ARSENIC CONCENTRATIONS IN SILICON PRODUCED BY THE DIFFUSION PROCESS [J].

MUROTA, J ;

ARAI, E ;

KOBAYASHI, K ;

KUDO, K .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :804-808

[8] ARSENIC CLUSTERING IN SILICON [J].

SCHWENKER, RO ;

PAN, ES ;

LEVER, RF .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (08) :3195-+

[9]

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