MICROMACHINING USING A FOCUSED ION-BEAM

被引：61

作者：

YOUNG, RJ

机构：

[1] FEI Europe, Brookfield Business Centre, Cottenham, Cambridge

来源：

VACUUM | 1993年 / 44卷 / 3-4期

关键词：

D O I：

10.1016/0042-207X(93)90182-A

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper describes the micro-machining of micron and sub-micron scale structures by focused ion beams (FIB). The general requirements for micro -machining systems and the characteristics of FIB milling are considered. A range of applications of FIB milling are also discussed. These include failure analysis and device modification, which are now finding wide use in semiconductor research. Applications in other areas (such as optics and micro-mechanics) are increasing in number, FIB milling being a very flexible and precise method for producing prototype or specialized structures.

引用

收藏

页码：353 / 356

页数：4

相关论文

共 12 条

[1] SIMPLE CALCULATION ON TOPOGRAPHY OF FOCUSED-ION-BEAM SPUTTERED SURFACE [J].

ISHITANI, T ;

OHNISHI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (02) :L320-L322

[2]

KIRK ECG, 1987, I PHYS C SER, V87, P691

[3] IMPROVING RESOLUTION IN PHOTOLITHOGRAPHY WITH A PHASE-SHIFTING MASK [J].

LEVENSON, MD ;

VISWANATHAN, NS ;

SIMPSON, RA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (12) :1828-1836

[4] THE FOCUSED ION-BEAM AS AN INTEGRATED-CIRCUIT RESTRUCTURING TOOL [J].

MELNGAILIS, J ;

MUSIL, CR ;

STEVENS, EH ;

UTLAUT, M ;

KELLOGG, EM ;

POST, RT ;

GEIS, MW ;

MOUNTAIN, RW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01) :176-180

[5] LIQUID-METAL ION SOURCES FOR FIB MICROFABRICATION SYSTEMS - RECENT ADVANCES [J].

PREWETT, PD ;

KELLOGG, EM .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 6 (1-2) :135-142

[6] A 3RD-GENERATION AUGER MICROSCOPE USING PARALLEL MULTISPECTRAL DATA ACQUISITION AND ANALYSIS [J].

PRUTTON, M ;

WALKER, CGH ;

GREENWOOD, JC ;

KENNY, PG ;

DEE, JC ;

BARKSHIRE, IR ;

ROBERTS, RH ;

ELGOMATI, MM .

SURFACE AND INTERFACE ANALYSIS, 1991, 17 (02) :71-84

[7] THE APPLICATION OF ION-BEAM BEVEL SECTIONING AND POST-SPUTTER ETCH TREATMENT IN AUGER CRATER-EDGE PROFILING [J].

SKINNER, DK .

SURFACE AND INTERFACE ANALYSIS, 1989, 14 (09) :567-571

[8]

WAGNER A, 1983, P SOC PHOTO-OPT INST, V393, P167, DOI 10.1117/12.935108

[9] IDENTIFICATION AND REMOVAL OF OPAQUE DEFECTS ON X-RAY MASKS IN A FOCUSSED ION BEAM REPAIR SYSTEM. [J].

Weigmann, U. ;

Burghause, H. ;

Schaffer, H. .

Microelectronic Engineering, 1987, 6 (1-4) :617-622

[10] CHARACTERISTICS OF SILICON REMOVAL BY FINE FOCUSED GALLIUM ION-BEAM [J].

YAMAGUCHI, H ;

SHIMASE, A ;

HARAICHI, S ;

MIYAUCHI, T .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01) :71-74