REFLOW MECHANISMS OF CONTACT VIAS IN VLSI PROCESSING

被引：15

作者：

LEVY, RA

NASSAU, K

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 07期

关键词：

D O I：

10.1149/1.2108907

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1417 / 1424

页数：8

共 16 条

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LEVY, RA .

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[4]

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[5]

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[7] PROPERTIES OF LPCVD ALUMINUM FILMS PRODUCED BY DISPROPORTIONATION OF ALUMINUM MONOCHLORIDE [J].

LEVY, RA ;

GALLAGHER, PK ;

CONTOLINI, R ;

SCHREY, F .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (02) :457-463

[8] EVALUATION OF THE PHOSPHORUS CONCENTRATION AND ITS EFFECT ON VISCOUS-FLOW AND REFLOW IN PHOSPHOSILICATE GLASS [J].

LEVY, RA ;

VINCENT, SM ;

MCGAHAN, TE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (06) :1472-1480

[9] CHARACTERIZATION OF LPCVD ALUMINUM FOR VLSI PROCESSING [J].

LEVY, RA ;

GREEN, ML ;

GALLAGHER, PK .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (09) :2175-2182

[10]

LEVY RA, 1985, J ELECTROCHEM SOC, V132, P159, DOI 10.1149/1.2113753

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