ON THE MODELING OF HYDROGEN DIFFUSION-PROCESSES AND COMPLEX-FORMATION IN P-TYPE CRYSTALLINE SILICON

被引：16

作者：

RIZK, R ^{[1
]}

DEMIERRY, P ^{[1
]}

BALLUTAUD, D ^{[1
]}

AUCOUTURIER, M ^{[1
]}

MATHIOT, D ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,CNS,F-38243 MEYLAN,FRANCE

来源：

PHYSICA B | 1991年 / 170卷 / 1-4期

关键词：

D O I：

10.1016/0921-4526(91)90114-T

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Deuterium diffusion profiles in p-type silicon doped with boron (10(17) -10(19) cm-3) and aluminum (10(18) cm-3) are simulated with an improved version of a previously reported model. The new approach, based on the observation of experimental profiles, excludes H2 molecule formation and leads to a reduced fit parameters model. The different diffusion coefficients and activation energies of H0 and H+ species are determined and discussed in the light of available data. The dissociation energies of BH and AlH complexes are also calculated and found to be in good agreement with the corresponding reported values in the literature.

引用

页码：129 / 134

页数：6

共 18 条

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