PREFERENTIAL SPUTTERING FROM DISORDERED GAAS

被引：30

作者：

SINGER, IL

MURDAY, JS

COMAS, J

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 18卷 / 02期

关键词：

D O I：

10.1116/1.570715

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：161 / 163

页数：3

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共 26 条

[1] LOW-ENERGY SPUTTERING YIELDS OF GE SINGLE CRYSTALS AS A FUNCTION OF TEMPERATURE
ANDERSON, GS
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (04) : 1607 - &
[2] TEMPERATURE DEPENDENCE OF SPUTTERING YIELDS OF GE (100) AND (110) SURFACES
ANDERSON, GS
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) : 2838 - &
[3] ATOM EJECTION STUDIES FOR SPUTTERING OF SEMICONDUCTORS
ANDERSON, GS
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) : 3455 - &
[4] TEMPERATURE DEPENDENCE OF EJECTION PATTERNS IN GE, SI, INSB, AND INAS SPUTTERING
ANDERSON, GS
WEHNER, GK
[J]. SURFACE SCIENCE, 1964, 2 : 367 - 375
[5] SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS
ARTHUR, JR
[J]. SURFACE SCIENCE, 1974, 43 (02) : 449 - 461
[6] KRYPTON ENTRAPMENT IN CONTINUOUS-BIASED SPUTTER-DEPOSITED GLASSY METALS
BAYNE, MA
MOSS, RW
MCCLANAHAN, ED
[J]. THIN SOLID FILMS, 1979, 63 (01) : 137 - 141
[7] INFLUENCE OF SPUTTERING, RANGE SHORTENING AND STRESS-INDUCED OUT-DIFFUSION ON RETENTION OF XENON IMPLANTED IN SILICON
BLANK, P
WITTMAACK, K
SCHULZ, F
[J]. NUCLEAR INSTRUMENTS & METHODS, 1976, 132 (JAN-F): : 387 - 392
[8] BOMBARDMENT-INDUCED PHOTON EMISSION FROM GAAS AS A FUNCTION OF TARGET TEMPERATURE
BROZDOWSKAWARCZAK, B
GABLA, L
PEDRYS, R
SZYMONSKI, M
WARCZAK, A
[J]. SURFACE SCIENCE, 1978, 75 (01) : 61 - 68
[9] SURFACE CESIUM CONCENTRATIONS IN CESIUM-ION-BOMBARDED ELEMENTAL AND COMPOUND TARGETS
CHELGREN, JE
KATZ, W
DELINE, VR
EVANS, CA
BLATTNER, RJ
WILLIAMS, P
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 324 - 327
[10] SPUTTERING YIELDS OF SEVERAL SEMICONDUCTING COMPOUNDS UNDER ARGON ION BOMBARDMENT
COMAS, J
COOPER, CB
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) : 2820 - &