GROWTH OF ZNSE/ZNMGSSE QUANTUM-WELL STRUCTURES BY METALORGANIC MOLECULAR-BEAM EPITAXY UNDER IN-SITU OBSERVATION OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATION

被引：2

作者：

SUDA, J

KAWAKAMI, Y

FUJITA, S

机构：

[1] Department of Electrical Engineering, Kyoto University, Kyoto

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)80038-E

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

ZnSe/ZnMgSSe quantum well (QW) structures with an abrupt heterointerface have successfully been grown on [100]-oriented GaAs substrates by metalorganic molecular beam epitaxy (MOMBE) under in situ observation of reflection high energy electron diffraction (RHEED). Source materials used were elemental zinc (Zn), selenium (Se), gaseous bis-methylcyclopentadienyl-magnesium ((MeCp)(2)Mg) and hydrogen sulfide (H2S). intensity oscillations of the RHEED specular spot were observed over 10 cycles during the growth of ZnSe well and ZnMgSSe barrier layers. A series of single quantum wells (SQWs) with various well widths were grown and characterized by photoluminescence (PL) measurements at 4.2 K. SQWs with 73 and 33 Angstrom well widths exhibited sharp intense emissions which originated from n = 1 heavy-hole free excitons.

引用

页码：738 / 742

页数：5

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