GAS-SOURCE MOLECULAR-BEAM EPITAXIAL-GROWTH OF (ZN,MG)(S,SE) USING BIS-METHYLCYCLOPENTADIENYL-MAGNESIUM AND HYDROGEN-SULFIDE

被引：17

作者：

SUDA, J

KAWAKAMI, Y

FUJITA, S

机构：

[1] Department of Electrical Engineering, Kyoto University, Kyoto

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 3A期

关键词：

ZNMGSE; ZNMGSSE; GSMBE; MOMBE; (MECP)2MG; H2S;

D O I：

10.1143/JJAP.33.L290

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter we report the first successful gas-source molecular beam epitaxy (GSMBE) of ZnMgSSe on (100) GaAs substrates. Source materials used were elemental zinc (Zn), elemental selenium (Se), hydrogen sulfide (H2S) and bis-methylcyclopentadienyl-magnesium ((MeCp)2Mg). It is revealed that the growth by this technique results in good controllability of solid compositions of this quaternary alloy system. Photoluminescence and X-ray diffraction measurements show that the layer coherently grown on GaAs exhibits high quality comparable to that grown by conventional molecular beam epitaxy (MBE).

引用

页码：L290 / L293

页数：4

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