REACTIVE ION ETCHING OF GAAS AND ALGAAS IN A BCL3-AR DISCHARGE

被引：15

作者：

COOPERMAN, SS ^{[1
]}

CHOI, HK ^{[1
]}

SAWIN, HH ^{[1
]}

KOLESAR, DF ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 01期

关键词：

D O I：

10.1116/1.584443

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：41 / 46

页数：6

共 18 条

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ESHO, S .

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[7]

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[8] REACTIVE ION ETCHING OF GAAS IN A CHLORINE PLASMA [J].

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[9]

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[10]

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