HIGHLY DOPED IN0.52AL0.48AS GROWTH AND OHMIC CONTACT FORMATION

被引:3
作者
KATZ, A [1 ]
HOBSON, WS [1 ]
CHU, SNG [1 ]
WEIR, BE [1 ]
PEARTON, SJ [1 ]
SAVIN, W [1 ]
机构
[1] NEW JERSEY INST TECHNOL,NEWARK,NJ 07102
关键词
D O I
10.1088/0268-1242/6/12/010
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The properties of ohmic contacts to metallorganic, chemical vapour deposited In0.52Al0.48 As layers are described. The Pt/Ti bilayer metallization scheme was applied to a p-type InAIAs layer (Zn-doped approximately 5 x 10(18) cm-3) in an attempt to produce an ohmic contact. The as-deposited system exhibited rectifying behaviour with a barrier height of about 0.40 eV. Rapid thermal processing even at temperatures of 300-degrees-C led to the formation of an ohmic contact. The lowest specific resistance value of 2.5 x 10(-5) OMEGA cm-2 was measured for the Pt/Ti/InAlAs contact after heating at 450-degrees-C for a period of 30 s. The contact microstructure was stable through heating cycles at temperatures up to 500-degrees-C, above which extensive interfacial reactions were observed.
引用
收藏
页码:1158 / 1162
页数:5
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