HIGHLY DOPED IN0.52AL0.48AS GROWTH AND OHMIC CONTACT FORMATION

被引：3

作者：

KATZ, A ^{[1
]}

HOBSON, WS ^{[1
]}

CHU, SNG ^{[1
]}

WEIR, BE ^{[1
]}

PEARTON, SJ ^{[1
]}

SAVIN, W ^{[1
]}

机构：

[1] NEW JERSEY INST TECHNOL,NEWARK,NJ 07102

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 12期

关键词：

D O I：

10.1088/0268-1242/6/12/010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The properties of ohmic contacts to metallorganic, chemical vapour deposited In0.52Al0.48 As layers are described. The Pt/Ti bilayer metallization scheme was applied to a p-type InAIAs layer (Zn-doped approximately 5 x 10(18) cm-3) in an attempt to produce an ohmic contact. The as-deposited system exhibited rectifying behaviour with a barrier height of about 0.40 eV. Rapid thermal processing even at temperatures of 300-degrees-C led to the formation of an ohmic contact. The lowest specific resistance value of 2.5 x 10(-5) OMEGA cm-2 was measured for the Pt/Ti/InAlAs contact after heating at 450-degrees-C for a period of 30 s. The contact microstructure was stable through heating cycles at temperatures up to 500-degrees-C, above which extensive interfacial reactions were observed.

引用

页码：1158 / 1162

页数：5

共 25 条

[1] SCHOTTKY-BARRIER HEIGHT OF IN0.43AL0.57AS
CHU, P
LIN, CL
WIEDER, HH
[J]. ELECTRONICS LETTERS, 1986, 22 (17) : 890 - 892
[2] INTERFACIAL MICROSTRUCTURE AND ELECTRICAL-PROPERTIES OF THE PT/TI OHMIC CONTACT IN P-IN0.53GA0.47AS FORMED BY RAPID THERMAL-PROCESSING
CHU, SNG
KATZ, A
BOONE, T
THOMAS, PM
RIGGS, VG
DAUTREMONTSMITH, WC
JOHNSTON, WD
[J]. JOURNAL OF APPLIED PHYSICS, 1990, 67 (08) : 3754 - 3760
[3] HIROSE K, 1986, I PHYS C SER, V79, P529
[4] CHARACTERISTICS OF SCHOTTKY DIODES ON ALXIN1-XAS GROWN BY MOCVD
HODSON, PD
WALLIS, RH
DAVIES, JI
RIFFAT, JR
MARSHALL, AC
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (11) : 1136 - 1138
[5] INTERNAL PHOTOEMISSION-STUDIES OF (GAIN)AS, (ALIN)AS SCHOTTKY DIODES AND (GAIN)AS/(ALIN)AS HETEROJUNCTION GROWN BY MOLECULAR-BEAM EPITAXY
HSIEH, KH
WICKS, G
CALAWA, AR
EASTMAN, LF
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 700 - 702
[6] OHMIC CONTACTS ON SELECTIVELY DOPED ALINAS/GAINAS HETEROSTRUCTURES USING NI, AUGE AND AU
KAMADA, M
ISHIKAWA, H
MORI, Y
KOJIMA, C
[J]. SOLID-STATE ELECTRONICS, 1987, 30 (12) : 1345 - 1349
[7] PT/TI/N-INP NONALLOYED OHMIC CONTACTS FORMED BY RAPID THERMAL-PROCESSING
KATZ, A
WEIR, BE
CHU, SNG
THOMAS, PM
SOLER, M
BOONE, T
DAUTREMONTSMITH, WC
[J]. JOURNAL OF APPLIED PHYSICS, 1990, 67 (08) : 3872 - 3875
[8] MICROSTRUCTURE AND CONTACT RESISTANCE TEMPERATURE-DEPENDENCE OF PT/TI OHMIC CONTACT TO ZN-DOPED GAAS
KATZ, A
NAKAHARA, S
SAVIN, W
WEIR, BE
[J]. JOURNAL OF APPLIED PHYSICS, 1990, 68 (08) : 4133 - 4140
[9] PT/TI OHMIC CONTACT TO P++-INGAASP (1.3 MU-M) FORMED BY RAPID THERMAL-PROCESSING
KATZ, A
THOMAS, PM
CHU, SNG
DAUTREMONTSMITH, WC
SOBERS, RG
NAPHOLTZ, SG
[J]. JOURNAL OF APPLIED PHYSICS, 1990, 67 (02) : 884 - 889
[10] AU/PT/TI CONTACTS TO P-IN0.53GA0.47AS AND N-INP LAYERS FORMED BY A SINGLE METALLIZATION COMMON STEP AND RAPID THERMAL-PROCESSING
KATZ, A
WEIR, BE
DAUTREMONTSMITH, WC
[J]. JOURNAL OF APPLIED PHYSICS, 1990, 68 (03) : 1123 - 1128

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