FEMTOSECOND CARRIER DYNAMICS IN THE PRESENCE OF A COLD-PLASMA IN GAAS AND ALGAAS

被引:8
作者
ACIOLI, LH
ULMAN, M
VALLEE, F
FUJIMOTO, JG
机构
[1] MIT,DEPT PHYS,CAMBRIDGE,MA 02139
[2] MIT,DEPT ELECT ENGN,CAMBRIDGE,MA 02139
[3] MIT,ELECTR RES LAB,CAMBRIDGE,MA 02139
[4] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139
关键词
D O I
10.1063/1.109951
中图分类号
O59 [应用物理学];
学科分类号
摘要
The femtosecond dynamics of hot carriers interacting with a cold high density electron-hole plasma are investigated in GaAs and Al0.2Ga0.8As. Studies are performed using a three pulse pump-probe technique where a cold plasma is first generated by a femtosecond pulse, then pump-probe transmission measurements are performed after a few hundred picoseconds delay. The results indicate only a small increase of the hot carrier thermalization rate even for plasma densities as high as 10(18) cm-3.
引用
收藏
页码:666 / 668
页数:3
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