KINETIC ROUGHNESS IN EPITAXY (EXPERIMENTAL)

被引：12

作者：

COTTA, MA

HAMM, RA

CHU, SNG

HULL, R

HARRIOTT, LR

TEMKIN, H

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

[2] COLORADO STATE UNIV,DEPT ELECT ENGN,FT COLLINS,CO 80523

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1995年 / 30卷 / 2-3期

关键词：

INDIUM PHOSPHIDE; SURFACE DIFFUSION; MOLECULAR BEAM EPITAXY; SURFACE ROUGHNESS;

D O I：

10.1016/0921-5107(94)09008-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Different regimes of growth morphology are observed for InP films prepared by metal-organic molecular beam epitaxy. Below a well-defined minimum growth temperature T-g(min) kinetic roughening is observed. From the temperature dependence of roughening near T-g(min) for substrates with different misorientations we estimate a value of 0.4-0.5 eV for the Schwoebel-Erlich step crossing barrier. At growth temperatures higher than T-g(min) we observe the formation of localized surface defects associated with P vacancies. The density of defects is strongly dependent on the thermodynamic and kinetic growth parameters.

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页码：137 / 142

页数：6

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