N+-POLYSILICON ETCHING IN CCL4/HE DISCHARGES - CHARACTERIZATION AND MODELING

被引：8

作者：

GOGOLIDES, E

SAWIN, HH

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 04期

关键词：

D O I：

10.1149/1.2096809

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1147 / 1154

页数：8

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