COMPARISON OF LIFETIME MEASUREMENTS FROM THE ZERBST AND THE DISPERSION TECHNIQUES

被引：2

作者：

KLAUSMANN, E

FAHRNER, WR

LOFFLER, S

NEITZERT, HC

机构：

[1] UNIV HAGEN, W-5800 HAGEN, GERMANY

[2] ECOLE POLYTECH, LPICM, F-91128 PALAISEAU, FRANCE

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1993年 / 140卷 / 08期

关键词：

D O I：

10.1149/1.2220817

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The admittance of metal oxide semiconductor (MOS) diode after switching from inversion to deep depletion is calculated. Special attention is given to the final stationary state in inversion conditions. For this state the relaxation equations must be modified because the usually assumed large signal carrier deficits are not valid. The results of these dispersion measurements are compared with the conventional Zerbst technique. Good agreement is obtained. The dispersion technique is a valuable tool for determining very short lifetimes.

引用

页码：2323 / 2327

页数：5

共 12 条

[1] MAJORITY-CARRIER AND MINORITY-CARRIER LIFETIME IN MOS STRUCTURES [J].