MAJORITY-CARRIER AND MINORITY-CARRIER LIFETIME IN MOS STRUCTURES

被引：11

作者：

BACCARANI, G

BAFFONI, CA

RUDAN, M

SPADINI, G

机构：

[1] UNIV BOLOGNA, IST ELETTR, 40136 BOLOGNA, ITALY

[2] CNR, LAB LAMEI, VIA CASTAGNOLI 1, 40126 BOLOGNA, ITALY

来源：

SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 12期

关键词：

D O I：

10.1016/0038-1101(75)90177-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1115 / 1122

页数：8

共 43 条

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SEVERI, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (01) :122-125

[2] ELECTRICAL CHARACTERISTICS OF MOS STRUCTURES ON LESS THAN 111 GREATER THAN AND LESS THAN 100 GREATER THAN ORIENTED N-TYPE SILICON AS INFLUENCED BY USE OF HYDROGEN-CHLORIDE DURING THERMAL OXIDATION [J].

BACCARANI, G ;

SEVERI, M ;

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[3] ORIENTATION DEPENDENCE OF BUILT-IN SURFACE CHARGE ON THERMALLY OXIDIZED SILICON [J].

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GREGOR, LV .

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BREWS, JR .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) :1276-1279

[5] SURFACE POTENTIAL FLUCTUATIONS GENERATED BY INTERFACE CHARGE INHOMOGENEITIES IN MOS DEVICES [J].

BREWS, JR .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) :2306-&

[6]

Calzolari P. U., 1972, Alta Frequenza, V41, P848

[7] EFFECTS OF NONUNIFORM DOPING ON GENERATION-LIFETIME MEASUREMENT IN MOS CAPACITORS [J].

CALZOLARI, PU ;

GRAFFI, S ;

MORANDI, C .

ELECTRONICS LETTERS, 1973, 9 (12) :273-274

[8]

CALZOLARI PU, 1973, 3RD ESSDERC MUNCH GE

[9]

CALZOLARI PU, 1974, 4TH ESSDERC NOTT

[10]

CALZOLARI PU, 1972, 2ND ESSDERC LANC

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