MAJORITY-CARRIER AND MINORITY-CARRIER LIFETIME IN MOS STRUCTURES

被引：11

作者：

BACCARANI, G

BAFFONI, CA

RUDAN, M

SPADINI, G

机构：

[1] UNIV BOLOGNA, IST ELETTR, 40136 BOLOGNA, ITALY

[2] CNR, LAB LAMEI, VIA CASTAGNOLI 1, 40126 BOLOGNA, ITALY

来源：

SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 12期

关键词：

D O I：

10.1016/0038-1101(75)90177-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1115 / 1122

页数：8

共 43 条

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