EXCITATION SPECTROSCOPY IN GAP-RICH GAXIN1-XP ALLOYS DOPED WITH NITROGEN

被引：30

作者：

MARIETTE, H ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

SOLID STATE COMMUNICATIONS | 1981年 / 38卷 / 12期

关键词：

D O I：

10.1016/0038-1098(81)90986-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1193 / 1197

页数：5

共 11 条

[1] FLUORESCENT DECAY TIMES OF EXCITONS BOUND TO ISOELECTRONIC TRAPS IN GAP AND ZNTE
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[2] GARBUZOV DZ, 1975, SOV PHYS SEMICOND+, V8, P998
[3] ELECTROLUMINESCENCE IN GAASXP1-X, INXGA1-XP, AND ALXGA1-XP JUNCTIONS WITH X LESS THAN OR APPROXIMATELY EQUAL TO 0.01
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DEAN, PJ
WHITE, HG
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[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (06) : 2328 - &
[4] MARBEUF A, 1980, INT C CRYST GROWTH, V6, P401
[5] ALLOYING INDUCED SHIFT BETWEEN EXCITATION AND LUMINESCENCE OF THE NITROGEN BOUND EXCITON IN GAPXAS1-XALLOYS
MARIETTE, H
CHEVALLIER, J
[J]. SOLID STATE COMMUNICATIONS, 1979, 29 (03) : 263 - 266
[6] LOCAL-ENVIRONMENT EFFECT ON THE NITROGEN BOUND-STATE IN GAPXAS1-X ALLOYS - EXPERIMENTS AND COHERENT-POTENTIAL APPROXIMATION-THEORY
MARIETTE, H
CHEVALLIER, J
LEROUXHUGON, P
[J]. PHYSICAL REVIEW B, 1980, 21 (12): : 5706 - 5716
[7] LIQUID-PHASE EPITAXIAL-GROWTH GAXIN1-XP
MARIETTE, H
BOURNEIX, J
MARBEUF, A
[J]. REVUE DE PHYSIQUE APPLIQUEE, 1976, 11 (04): : 475 - 481
[8] LUMINESCENCE AND DIRECT EXPERIMENTAL-OBSERVATIONS OF BAND-STRUCTURE EFFECTS IN NITROGEN-DOPED GAXIN1-XP ALLOYS
MARIETTE, H
CHEVALLIER, J
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 1200 - 1205
[9] NITROGEN TRAP BOUND-STATES IN IN1-XGAXP
NELSON, RJ
HOLONYAK, N
[J]. SOLID STATE COMMUNICATIONS, 1976, 20 (06) : 549 - 551
[10] EXCITON ABSORPTION, PHOTOLUMINESCENCE AND BAND-STRUCTURE OF N-FREE AND N-DOPED IN-1-XGA-XP
NELSON, RJ
HOLONYAK, N
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1976, 37 (06) : 629 - 637

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