IN-SITU CHARACTERIZATION OF ALE GROWTH BY REAGENT PULSE DELAY TIMES IN A FLOW-TYPE REACTOR

Time delays of reagent gas pulses which occur in the flow-type atomic layer epitaxy reactor were studied. It was shown that the time delays depend on the source temperature, reactor geometry and reactor temperature and characterize the growth process as well as the growing film. First of all, the surface density of adsorbed precursor molecules and the constituent element mole ratio can be obtained from time delay measurements.