SET OF 5 RELATED PHOTOLUMINESCENCE DEFECTS IN SILICON FORMED THROUGH NITROGEN-CARBON INTERACTIONS

被引：14

作者：

DORNEN, A

PENSL, G

SAUER, R

机构：

[1] UNIV ERLANGEN NURNBERG,INST ANGEW PHYS,D-8520 ERLANGEN,FED REP GER

[2] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.35.9318

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：9318 / 9321

页数：4

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