ON-OFF CURRENT RATIO IN P-CHANNEL POLY-SI MOSFETS - DEPENDENCE ON HOT-CARRIER STRESS CONDITIONS

被引：27

作者：

RODDER, M

机构：

[1] Semiconductor Process and Design Center, Texas Instruments Incorporated, Dallas

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 08期

关键词：

D O I：

10.1109/55.57929

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

P-channel polysilicon MOSFET's have been stressed in the saturation and OFF-state regimes. Both the drive (ON) current and leakage (OFF) current can be either increased or decreased after particular bias stress. ON/OFF current ratio can be decreased by a factor of 2 for a stress bias of VGS = VDS = -11 V but can be increased by a factor of 50 for a stress bias of VGS = -2 V, VDS = -11 V. The effects of bias stress are related to either trapping of hot electrons or to hot-hole-induced donor-type interface state generation. © 1990 IEEE

引用

页码：346 / 348

页数：3

共 7 条

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