TRANSMISSION ELECTRON-MICROSCOPY OF STRAINED INYGA1-YAS/GAAS MULTIQUANTUM WELLS - THE GENERATION OF MISFIT DISLOCATIONS

被引：6

作者：

CHANG, KH ^{[1
]}

BHATTACHARYA, PK ^{[1
]}

GIBALA, R ^{[1
]}

机构：

[1] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,ANN ARBOR,MI 48109

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 09期

关键词：

D O I：

10.1063/1.342654

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3391 / 3394

页数：4

共 16 条

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[2]

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APPLIED PHYSICS LETTERS, 1987, 51 (13) :1004-1006

[6] DEPENDENCE OF CRITICAL LAYER THICKNESS ON STRAIN FOR INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES [J].

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[7] INSITU OBSERVATIONS OF MISFIT DISLOCATION PROPAGATION IN GEXSI1-X/SI(100) HETEROSTRUCTURES [J].

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BEAN, JC ;

WERDER, DJ ;

LEIBENGUTH, RE .

APPLIED PHYSICS LETTERS, 1988, 52 (19) :1605-1607

[8] STABILITY OF SEMICONDUCTOR STRAINED-LAYER SUPERLATTICES [J].

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[9] AN EXACTLY SOLVABLE MODEL FOR CALCULATING CRITICAL MISFIT AND THICKNESS IN EPITAXIAL SUPERLATTICES .2. LAYERS OF UNEQUAL ELASTIC-CONSTANTS AND THICKNESSES [J].

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[10] MOLECULAR-BEAM EPITAXIAL-GROWTH AND PHOTOLUMINESCENCE OF NEAR-IDEAL GAAS-ALXGA1-XAS SINGLE QUANTUM WELLS [J].

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JOURNAL OF APPLIED PHYSICS, 1985, 58 (05) :1986-1989

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