PHOTOEXCITED CARRIER LIFETIMES AND SPATIAL TRANSPORT IN SURFACE-FREE GAAS HOMOSTRUCTURES

被引：23

作者：

SMITH, LM ^{[1
]}

WOLFORD, DJ ^{[1
]}

MARTINSEN, J ^{[1
]}

VENKATASUBRAMANIAN, R ^{[1
]}

GHANDHI, SK ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,TROY,NY 12180

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 04期

关键词：

D O I：

10.1116/1.584967

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：787 / 792

页数：6

共 16 条

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[8] VERY LOW INTERFACE RECOMBINATION VELOCITY IN (AL,GA)AS HETEROSTRUCTURES GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

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[9] MINORITY-CARRIER LIFETIME AND INTERNAL QUANTUM EFFICIENCY OF SURFACE-FREE GAAS [J].

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[10]

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