POSITRON-ANNIHILATION IN NARROW-GAP SEMICONDUCTORS

被引：15

作者：

BOUARISSA, N ^{[1
]}

WEST, RN ^{[1
]}

AOURAG, H ^{[1
]}

机构：

[1] UNV SIDI BEL ABBES, DEPT PHYS, COMPUTAT MAT SCI LAB, SIDI BEL ABBES 22000, ALGERIA

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1995年 / 188卷 / 02期

关键词：

D O I：

10.1002/pssb.2221880216

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The valence electron and positron charge densities in InAs and InSb are obtained from wave functions derived in a model pseudopotential band-structure calculation. It is found that the positron density is maximum in the open interstices and is excluded not only, as usual, from the ion cores but also to a considerable degree from the valence bonds. Electron-positron momentum densities are calculated for the (001-110) plane. The results are used to analyze the positron effect in narrow-gap semiconductors.

引用

页码：723 / 734

页数：12

共 47 条

[1]

[Anonymous], ELECTRONIC STRUCTURE

[2] INTERPRETATION OF THE GROUP-THEORETICALLY UNEXPECTED SHAPE OF THE CONTOUR APPEARING IN THE EXPERIMENTAL LCW DATA FOR SI AND GE [J].

AOURAG, H ;

KHELIFA, B ;

BELAIDI, A ;

KOBAYASI, T .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1990, 160 (02) :561-567

[3] ELECTRON AND POSITRON DISTRIBUTIONS IN GRAY TIN [J].

AOURAG, H ;

SOUDINI, B ;

KHELIFA, B ;

BELAIDI, A .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1990, 161 (02) :685-695

[4] POSITRON AFFINITY IN (III-V) SEMICONDUCTORS [J].

AOURAG, H ;

KHELIFA, B .

MATERIALS CHEMISTRY AND PHYSICS, 1991, 27 (01) :61-67

[5] POSITRON-ANNIHILATION IN SI AND GE [J].

AOURAG, H ;

BELAIDI, A ;

KOBAYASI, T ;

WEST, RN ;

KHELIFA, B .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1989, 155 (01) :191-200

[6] POSITRON DISTRIBUTION IN SEMICONDUCTORS [J].

AOURAG, H ;

KHELIFA, B ;

BELAIDI, A ;

BELARBI, Z .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1990, 160 (01) :201-209

[7] ELECTRON AND POSITRON DISTRIBUTION FOR THE PLANE (110) IN SI AND GAAS [J].

AOURAG, H ;

BELAIDI, A ;

KOBAYASI, T ;

WEST, RN ;

KHELIFA, B .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1989, 156 (02) :497-505

[8] CONDUCTION BAND-EDGE CHARGE-DENSITIES IN II-VI COMPOUND SEMICONDUCTORS [J].

AOURAG, H ;

KHELIFA, B ;

HAMERLAINE, L ;

BELARBI, H ;

BELAIDI, A .

PHYSICS LETTERS A, 1990, 145 (8-9) :455-460

[9]

AOURAG H, 1993, IN PRESS MATER CHEM

[10] E1 TRANSITION IN GE - 2-DIMENSIONAL OR 3-DIMENSIONAL [J].

ASPNES, DE ;

ROWE, JE .

PHYSICAL REVIEW B, 1973, 7 (02) :887-891

← 1 2 3 4 5 →