学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
RECENT ADVANCES IN CHEMICAL VAPOR GROWTH OF ELECTRONIC MATERIALS
被引:16
作者
:
CHU, TL
论文数:
0
引用数:
0
h-index:
0
机构:
SO METHODIST UNIV, ELECTR SCI CTR, DALLAS, TX 75222 USA
SO METHODIST UNIV, ELECTR SCI CTR, DALLAS, TX 75222 USA
CHU, TL
[
1
]
SMELTZER, RK
论文数:
0
引用数:
0
h-index:
0
机构:
SO METHODIST UNIV, ELECTR SCI CTR, DALLAS, TX 75222 USA
SO METHODIST UNIV, ELECTR SCI CTR, DALLAS, TX 75222 USA
SMELTZER, RK
[
1
]
机构
:
[1]
SO METHODIST UNIV, ELECTR SCI CTR, DALLAS, TX 75222 USA
来源
:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY
|
1973年
/ 10卷
/ 01期
关键词
:
D O I
:
10.1116/1.1317938
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1 / 10
页数:10
相关论文
共 165 条
[1]
STRESSES IN HETEROEPITAXIAL LAYERS - GAAS1-XPX ON GAAS
[J].
ABRAHAMS, MS
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton
ABRAHAMS, MS
;
WEISBERG, LR
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton
WEISBERG, LR
;
TIETJEN, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton
TIETJEN, JJ
.
JOURNAL OF APPLIED PHYSICS,
1969,
40
(09)
:3754
-&
[2]
DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX
[J].
ABRAHAMS, MS
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton, 08540, NJ
ABRAHAMS, MS
;
WEISBERG, LR
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton, 08540, NJ
WEISBERG, LR
;
BUIOCCHI, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton, 08540, NJ
BUIOCCHI, CJ
;
BLANC, J
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton, 08540, NJ
BLANC, J
.
JOURNAL OF MATERIALS SCIENCE,
1969,
4
(03)
:223
-&
[3]
ORIENTATION DEPENDENCE OF EPITAXIAL INASXP(1-X) ON GAAS
[J].
ALLEN, HA
论文数:
0
引用数:
0
h-index:
0
ALLEN, HA
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(11)
:1417
-&
[4]
DEPOSITION OF EPITAXIAL INASXP(1-X) ON GAAS AND GAP SUBSTRATES
[J].
ALLEN, HA
论文数:
0
引用数:
0
h-index:
0
ALLEN, HA
;
MEHAL, EW
论文数:
0
引用数:
0
h-index:
0
MEHAL, EW
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(08)
:1081
-&
[5]
CHROMIUM DEPOSITION FROM DICUMENE-CHROMIUM TO FORM METAL-SEMICONDUCTOR DEVICES
[J].
ANANTHA, NG
论文数:
0
引用数:
0
h-index:
0
ANANTHA, NG
;
DOO, VY
论文数:
0
引用数:
0
h-index:
0
DOO, VY
;
SETO, DK
论文数:
0
引用数:
0
h-index:
0
SETO, DK
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(01)
:163
-+
[6]
[Anonymous], 1966, J ELECTROCHEM SOC
[7]
PREPARATION AND TRANSPORT PROPERTIES OF EPITAXIAL HGTE FILMS
[J].
ANTCLIFFE, GA
论文数:
0
引用数:
0
h-index:
0
机构:
Texas Instruments Incorporated, Dallas
ANTCLIFFE, GA
;
KRAUS, H
论文数:
0
引用数:
0
h-index:
0
机构:
Texas Instruments Incorporated, Dallas
KRAUS, H
.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1969,
30
(02)
:243
-+
[8]
EPITAXIAL VAPOR GROWTH OF GALLIUM ANTIMONIDE
[J].
ARIZUMI, T
论文数:
0
引用数:
0
h-index:
0
ARIZUMI, T
;
KAKEHI, M
论文数:
0
引用数:
0
h-index:
0
KAKEHI, M
;
SHIMOKAWA, R
论文数:
0
引用数:
0
h-index:
0
SHIMOKAWA, R
.
JOURNAL OF CRYSTAL GROWTH,
1971,
9
(01)
:151
-+
[9]
CHEMICAL TRANSPORT EPITAXY OF SILICON BY ORGANIC COMPOUNDS
[J].
AVIGAL, Y
论文数:
0
引用数:
0
h-index:
0
AVIGAL, Y
;
SCHIEBER, M
论文数:
0
引用数:
0
h-index:
0
SCHIEBER, M
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(12)
:1585
-+
[10]
SILICON CARBIDE CONTAMINATION OF EPITAXIAL SILICON GROWN BY PYROLYSIS OF TETRAMETHYL SILANE
[J].
AVIGAL, YY
论文数:
0
引用数:
0
h-index:
0
AVIGAL, YY
;
SCHIEBER, M
论文数:
0
引用数:
0
h-index:
0
SCHIEBER, M
.
JOURNAL OF CRYSTAL GROWTH,
1971,
9
(01)
:127
-&
←
1
2
3
4
5
6
7
8
9
10
→
共 165 条
[1]
STRESSES IN HETEROEPITAXIAL LAYERS - GAAS1-XPX ON GAAS
[J].
ABRAHAMS, MS
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton
ABRAHAMS, MS
;
WEISBERG, LR
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton
WEISBERG, LR
;
TIETJEN, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton
TIETJEN, JJ
.
JOURNAL OF APPLIED PHYSICS,
1969,
40
(09)
:3754
-&
[2]
DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX
[J].
ABRAHAMS, MS
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton, 08540, NJ
ABRAHAMS, MS
;
WEISBERG, LR
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton, 08540, NJ
WEISBERG, LR
;
BUIOCCHI, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton, 08540, NJ
BUIOCCHI, CJ
;
BLANC, J
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton, 08540, NJ
BLANC, J
.
JOURNAL OF MATERIALS SCIENCE,
1969,
4
(03)
:223
-&
[3]
ORIENTATION DEPENDENCE OF EPITAXIAL INASXP(1-X) ON GAAS
[J].
ALLEN, HA
论文数:
0
引用数:
0
h-index:
0
ALLEN, HA
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(11)
:1417
-&
[4]
DEPOSITION OF EPITAXIAL INASXP(1-X) ON GAAS AND GAP SUBSTRATES
[J].
ALLEN, HA
论文数:
0
引用数:
0
h-index:
0
ALLEN, HA
;
MEHAL, EW
论文数:
0
引用数:
0
h-index:
0
MEHAL, EW
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(08)
:1081
-&
[5]
CHROMIUM DEPOSITION FROM DICUMENE-CHROMIUM TO FORM METAL-SEMICONDUCTOR DEVICES
[J].
ANANTHA, NG
论文数:
0
引用数:
0
h-index:
0
ANANTHA, NG
;
DOO, VY
论文数:
0
引用数:
0
h-index:
0
DOO, VY
;
SETO, DK
论文数:
0
引用数:
0
h-index:
0
SETO, DK
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(01)
:163
-+
[6]
[Anonymous], 1966, J ELECTROCHEM SOC
[7]
PREPARATION AND TRANSPORT PROPERTIES OF EPITAXIAL HGTE FILMS
[J].
ANTCLIFFE, GA
论文数:
0
引用数:
0
h-index:
0
机构:
Texas Instruments Incorporated, Dallas
ANTCLIFFE, GA
;
KRAUS, H
论文数:
0
引用数:
0
h-index:
0
机构:
Texas Instruments Incorporated, Dallas
KRAUS, H
.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1969,
30
(02)
:243
-+
[8]
EPITAXIAL VAPOR GROWTH OF GALLIUM ANTIMONIDE
[J].
ARIZUMI, T
论文数:
0
引用数:
0
h-index:
0
ARIZUMI, T
;
KAKEHI, M
论文数:
0
引用数:
0
h-index:
0
KAKEHI, M
;
SHIMOKAWA, R
论文数:
0
引用数:
0
h-index:
0
SHIMOKAWA, R
.
JOURNAL OF CRYSTAL GROWTH,
1971,
9
(01)
:151
-+
[9]
CHEMICAL TRANSPORT EPITAXY OF SILICON BY ORGANIC COMPOUNDS
[J].
AVIGAL, Y
论文数:
0
引用数:
0
h-index:
0
AVIGAL, Y
;
SCHIEBER, M
论文数:
0
引用数:
0
h-index:
0
SCHIEBER, M
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(12)
:1585
-+
[10]
SILICON CARBIDE CONTAMINATION OF EPITAXIAL SILICON GROWN BY PYROLYSIS OF TETRAMETHYL SILANE
[J].
AVIGAL, YY
论文数:
0
引用数:
0
h-index:
0
AVIGAL, YY
;
SCHIEBER, M
论文数:
0
引用数:
0
h-index:
0
SCHIEBER, M
.
JOURNAL OF CRYSTAL GROWTH,
1971,
9
(01)
:127
-&
←
1
2
3
4
5
6
7
8
9
10
→