EVIDENCE FOR AN AS4 STICKING COEFFICIENT GREATER-THAN-0.5 IN THE MOLECULAR-BEAM EPITAXY OF GAAS

被引：5

作者：

WEBB, C

LIU, D

ECKSTEIN, JN

机构：

[1] Edward L. Ginzton Research Center, Varian Associates, Palo Alto

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 05期

关键词：

D O I：

10.1063/1.106611

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Since the early work of Foxon and Joyce [Surf. Sci. 50, 434 (1975)] it has been accepted that the maximum sticking coefficient for As4 on GaAs in MBE growth is 0.5. Our results, based upon dc photoemission behavior and oscillations both in RHEED and photoemission, call into question this assumption and suggest that it is possible to observe near unity sticking coefficients provided the nucleation of Ga droplets has not occurred.

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页码：571 / 573

页数：3

相关论文

共 9 条

[1] STUDY OF GAAS MBE GROWTH UNDER GA-RICH CONDITIONS BY RHEED INTENSITY OSCILLATIONS [J].

BOSACCHI, A ;

FRANCHI, S ;

KANTER, YO ;

CHIKICHEV, SI .

JOURNAL OF CRYSTAL GROWTH, 1989, 96 (04) :899-905

[2] CURRENT UNDERSTANDING AND APPLICATIONS OF THE RHEED INTENSITY OSCILLATION TECHNIQUE [J].

DOBSON, PJ ;

JOYCE, BA ;

NEAVE, JH ;

ZHANG, J .

JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :1-8

[3] PHOTOEMISSION OSCILLATIONS DURING EPITAXIAL-GROWTH [J].

ECKSTEIN, JN ;

WEBB, C ;

WENG, SL ;

BERTNESS, KA .

APPLIED PHYSICS LETTERS, 1987, 51 (22) :1833-1835

[4] OBSERVATION OF PHOTOELECTRON OSCILLATIONS DURING GROWTH OF GAAS [J].

ECKSTEIN, JN ;

WEBB, C ;

WENG, SL ;

BERTNESS, KA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02) :736-739

[5] REPRODUCIBLE GROWTH-CONDITIONS BY GROUP-III AND GROUP-V CONTROLLED INCORPORATION RATE MEASUREMENTS [J].

FERNANDEZ, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02) :745-748

[6] INTERACTION KINETICS OF AS4 AND GA ON [100] GAAS SURFACES USING A MODULATED MOLECULAR-BEAM TECHNIQUE [J].

FOXON, CT ;

JOYCE, BA .

SURFACE SCIENCE, 1975, 50 (02) :434-450

[7] A COMPARATIVE-STUDY OF THE INTERACTION KINETICS OF AS2 AND AS4 MOLECULES WITH GA-RICH GAAS (001) SURFACES [J].

GARCIA, JC ;

NERI, C ;

MASSIES, J .

JOURNAL OF CRYSTAL GROWTH, 1989, 98 (03) :511-518

[8]

LIU D, UNPUB

[9] REFLECTION MASS-SPECTROMETRY OF AS INCORPORATION DURING GAAS MOLECULAR-BEAM EPITAXY [J].

TSAO, JY ;

BRENNAN, TM ;

HAMMONS, BE .

APPLIED PHYSICS LETTERS, 1988, 53 (04) :288-290