LOW-TEMPERATURE CVD TIN AS A DIFFUSION BARRIER BETWEEN GOLD AND SILICON

被引：21

作者：

MUSHER, JN

GORDON, RG

机构：

[1] Harvard University, Cambridge, 02138, MA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1991年 / 20卷 / 12期

关键词：

CVD; TITANIUM NITRIDE; DIFFUSION;

D O I：

10.1007/BF03030216

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-temperature (200-degrees-C), atmospheric pressure chemical vapor deposited (APCVD) titanium nitride films are shown to be effective diffusion barriers for the Au/TiN/Si contact scheme. The samples were analyzed by Rutherford backscattering spectroscopy (RBS), and by optical microscopy. It was found that a pure TiN layer constitutes an effective barrier for 40 min at 550-degrees-C, at which point the TiN cracks and peels. Even thin layers of TiN (200 angstrom thick) can significantly reduce the amount of interdiffusion between the gold and silicon.

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收藏

页码：1105 / 1107

页数：3

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