ELECTROCHEMICAL ETCHING OF SILICON BY HYDRAZINE

The anodic dissolution and passivation of n- and p-type Si in different concentrations etching temperatures were studies. During etching, performed at 70 and 90-degrees-C, it was observed that the current-potential characteristics for both n- and p-type Si showed a current reduction after reaching a peak value. A linear I-V relation was observed for the room temperature etching. A mechanism, which accounts for the solution as under different biasing conditions, is proposed to give a qualitative explanation of the different I-V behaviors for n- and p-type semiconductors.