MICROSTRUCTURE AND LATTICE DISTORTION OF ANODIZED POROUS SILICON LAYERS

被引：85

作者：

SUGIYAMA, H

NITTONO, O

机构：

[1] Department of Metallurgical Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo, 152, Oh-okayama

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 103卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90184-M

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The lattice distortion and the microstructure of porous silicon (PS) layers, produced on p-type Si wafers with various electrical resistivities, have been investigated by means of X-ray multi-crystal diffractometry, transmission electron microscopy, infrared spectroscopy and gas adsorption method. It is shown that the lattice distortion of the PS layer is strongly influenced by hydrogen atoms chemisorbed on pore surfaces as well as by pore morphology in the layer, and that the crystalline quality of the layer is degraded secondarily as a result of oxidation on pore surfaces caused after desorption of hydrogen atoms from this layer. A hypothesis is proposed to explain consistently all the experimental results concerning crystalline properties of PS layers. © 1990.

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页码：156 / 163

页数：8

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