FORWARD IV CHARACTERISTICS OF PT-N-GAAS SCHOTTKY-BARRIER CONTACTS

被引：17

作者：

MURARKA, SP ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

SOLID-STATE ELECTRONICS | 1974年 / 17卷 / 09期

关键词：

D O I：

10.1016/0038-1101(74)90052-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：985 / 991

页数：7

共 27 条

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[13]

MURARKA SP, TO BE PUBLISHED

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[20] DEPENDENCE OF BARRIER HEIGHT OF METAL SEMICONDUCTOR CONTACT (AU-GAAS) ON THICKNESS OF SEMICONDUCTOR SURFACE-LAYER [J].

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