DEFECT EVOLUTION IN ION-IMPLANTED CRYSTALLINE SI PROBED BY IN-SITU CONDUCTIVITY MEASUREMENTS

被引：6

作者：

BATTAGLIA, A ^{[1
]}

COFFA, S ^{[1
]}

PRIOLO, F ^{[1
]}

SPINELLA, C ^{[1
]}

LIBERTINO, S ^{[1
]}

机构：

[1] CNR,IST METODOL & TECNOL MICROELETTR,I-95100 CATANIA,ITALY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1995年 / 96卷 / 1-2期

关键词：

D O I：

10.1016/0168-583X(94)00486-2

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have used in situ conductivity measurements to investigate the defect evolution and accumulation in ion implanted crystalline Si. Upon irradiation at room temperature with 400 keV Si and 2.7 MeV Pt ions the initial conductivity (4 X 10(-2) Omega(-1) cm(-1)) decreases by about four orders of magnitude to a value of 2 X 10(-6) Omega(-1) cm(-1), characteristic of intrinsic silicon, and then slowly increases at higher fluences. The strong decrease in conductivity, observed at low fluences, can be modelled in terms of dopant compensation produced by deep levels introduced by divacancies and complex defects in the band gap. At higher fluences the conduction is dominated by electron hopping in a buried continuous amorphous layer produced by irradiation. These results are reported and discussed.

引用

页码：219 / 222

页数：4

共 14 条

[1] DEFECT ACCUMULATION DURING ION IRRADIATION OF CRYSTALLINE SI PROBED BY IN-SITU CONDUCTIVITY MEASUREMENTS [J].

BATTAGLIA, A ;

COFFA, S ;

PRIOLO, F ;

SPINELLA, C .

APPLIED PHYSICS LETTERS, 1994, 65 (03) :306-308

[2] LOW-TEMPERATURE MODIFICATIONS IN THE DEFECT STRUCTURE OF AMORPHOUS-SILICON PROBED BY IN-SITU RAMAN-SPECTROSCOPY [J].

BATTAGLIA, A ;

COFFA, S ;

PRIOLO, F ;

COMPAGNINI, G ;

BARATTA, GA .

APPLIED PHYSICS LETTERS, 1993, 63 (16) :2204-2206

[3] A MONTE-CARLO COMPUTER-PROGRAM FOR THE TRANSPORT OF ENERGETIC IONS IN AMORPHOUS TARGETS [J].

BIERSACK, JP ;

HAGGMARK, LG .

NUCLEAR INSTRUMENTS & METHODS, 1980, 174 (1-2) :257-269

[4] DEFECT PRODUCTION AND LIFETIME CONTROL IN ELECTRON AND GAMMA-IRRADIATED SILICON [J].

BROTHERTON, SD ;

BRADLEY, P .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5720-5732

[5] DEFECT PRODUCTION AND ANNEALING IN ION-IMPLANTED AMORPHOUS-SILICON [J].

COFFA, S ;

PRIOLO, F ;

BATTAGLIA, A .

PHYSICAL REVIEW LETTERS, 1993, 70 (24) :3756-3759

[6] CONDUCTIVITY CHANGES AND IMPURITY DEFECT INTERACTIONS IN ION-IMPLANTED AMORPHOUS-SILICON [J].

COFFA, S ;

PRIOLO, F ;

POATE, JM ;

GLARUM, SH .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 :603-606

[7]

CORBETT JW, 1971, 1ST P INT C ION IMPL, P1

[8] ION-INDUCED DAMAGE AND AMORPHIZATION IN SI [J].

HOLLAND, OW ;

WHITE, CW .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 :353-362

[9] REVIEW OF SOME CHARGE TRANSPORT PROPERTIES OF SILICON [J].

JACOBONI, C ;

CANALI, C ;

OTTAVIANI, G ;

QUARANTA, AA .

SOLID-STATE ELECTRONICS, 1977, 20 (02) :77-89

[10] IMPLANTATION DAMAGE IN AMORPHOUS-SILICON [J].

MULLER, G ;

LECOMBER, PG .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 43 (03) :419-431

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