DOUBLE EPITAXIAL SILICON AVALANCHE PHOTODIODES FOR OPTICAL-FIBRE COMMUNICATIONS

被引：5

作者：

NISHIDA, K

ISHII, K

MINEMURA, K

TAGUCHI, K

机构：

[1] NIPPON ELECT CO LTD,CEN RES LABS,KAWASAKI,JAPAN

[2] NIPPON ELECT CO LTD,DIV LASER EQUIPMENT DEV,KAWASAKI,JAPAN

来源：

ELECTRONICS LETTERS | 1977年 / 13卷 / 10期

关键词：

D O I：

10.1049/el:19770206

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：280 / 281

页数：2

共 10 条

[1] AVALANCHE PHOTODIODES WITH A GAIN-BANDWIDTH PRODUCT OF MORE THAN GHZ-200 [J].

BERCHTOLD, K ;

KRUMPHOLZ, O ;

SURI, J .

APPLIED PHYSICS LETTERS, 1975, 26 (10) :585-587

[2] SILICON AVALANCHE PHOTODIODES WITH LOW MULTIPLICATION NOISE AND HIGH-SPEED RESPONSE [J].

KANBE, H ;

KIMURA, T ;

MIZUSHIMA, Y ;

KAJIYAMA, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (12) :1337-1343

[3] EXCESS NOISE IN SILICON AVALANCHE PHOTODIODES [J].

KANEDA, T ;

MATSUMOTO, H ;

SAKURAI, T ;

YAMAOKA, T .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) :1605-1607

[4]

LECROSNIER D, 1975, TECHN DIG INT ELECTR, P595

[5] MULTIPLICATION NOISE IN UNIFORM AVALANCHE DIODES [J].

MCINTYRE, RJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :164-+

[6]

MELCHIOR H, 1976, TECHNICAL DIGEST INT, P412

[7]

MULLER J, 1976, TECHNICAL DIGEST INT, P416

[8] AN OPTIMIZED AVALANCHE PHOTODIODE [J].

RUEGG, HW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (05) :239-+

[9]

SUGIMOTO S, TO BE PUBLISHED

[10]

WEBB PP, 1974, RCA REV, V35, P234

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