ELECTRICAL AND OPTICAL-PROPERTIES OF ION-IMPLANTED HG1-XCDXTE/CDTE EPILAYERS

被引：21

作者：

DESTEFANIS, GL

BOCH, R

ROUSSILLE, R

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1982年 / 59卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(82)90335-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：270 / 275

页数：6

共 27 条

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[17] MINORITY-CARRIER-LIFETIME DETERMINATION IN HG0.68CD0.32TE [J].

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[18] ELECTRICAL-PROPERTIES OF ION-IMPLANTED LAYERS IN HG0.79CD0.21TE [J].

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[19] INFRARED PHOTOVOLTAIC DETECTORS FROM ION-IMPLANTED CDXHG1-XTE [J].

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[20]

POLLA DL, 1980, J APPL PHYS, V51, P6233, DOI 10.1063/1.327608

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