OXIDATION PROPERTIES OF INSB(110) SURFACES

被引：10

作者：

KREUTZ, EW ^{[1
]}

RICKUS, E ^{[1
]}

SOTNIK, N ^{[1
]}

机构：

[1] TH DARMSTADT,INST ANGEW PHYS,D-6100 DARMSTADT,FED REP GER

来源：

SURFACE SCIENCE | 1977年 / 68卷 / 01期

关键词：

D O I：

10.1016/0039-6028(77)90227-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：392 / 398

页数：7

共 26 条

[1]

[Anonymous], 1967, ATZPRAXIS HALBLEITER

[2] INTRINSIC SURFACE STATES IN 3-5 COMPOUNDS [J].

CALANDRA, C ;

SANTORO, G .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (02) :L51-L54

[3] RELATION OF SCHOTTKY BARRIERS TO EMPTY SURFACE STATES ON 3-5 SEMICONDUCTORS [J].

EASTMAN, DE ;

FREEOUF, JL .

PHYSICAL REVIEW LETTERS, 1975, 34 (26) :1624-1627

[4]

GOBELI GW, 1965, PHYS REV A, V137, P245

[5] PHOTOEMISSION STUDY OF SURFACE STATES OF (110) GAAS SURFACE [J].

GREGORY, PE ;

SPICER, WE .

PHYSICAL REVIEW B, 1976, 13 (02) :725-738

[6] INTRINSIC AND DEFECT-INDUCED SURFACE-STATES OF CLEAVED GAAS(110) [J].

GUICHAR, GM ;

SEBENNE, CA ;

GARRY, GA .

PHYSICAL REVIEW LETTERS, 1976, 37 (17) :1158-1161

[7] SURFACE STRUCTURES AND PROPERTIES OF DIAMOND-STRUCTURE SEMICONDUCTORS [J].

HANEMAN, D .

PHYSICAL REVIEW, 1961, 121 (04) :1093-&

[8] SURFACE RECONSTRUCTION ON SEMICONDUCTORS [J].

HARRISON, WA .

SURFACE SCIENCE, 1976, 55 (01) :1-19

[9] ROUGHNESS OF CLEAVED SEMICONDUCTOR SURFACES [J].

HENZLER, M .

SURFACE SCIENCE, 1973, 36 (01) :109-122

[10] LEED-INVESTIGATION OF STEP ARRAYS ON CLEAVED GERMANIUM (111) SURFACES [J].

HENZLER, M .

SURFACE SCIENCE, 1970, 19 (01) :159-&

← 1 2 3 →