INSITU INVESTIGATION OF THE GROWTH OF MICROCRYSTALLINE SILICON OBTAINED BY ALTERNATING DEPOSITION AND HYDROGEN-ETCHING SEQUENCES

被引:21
作者
FANG, M
CHEVRIER, JB
DREVILLON, B
机构
[1] Laboratoire de Physique des Interfaces et des Couches Minces (UPR 258 du CNRS), Ecole Polytechnique
关键词
D O I
10.1016/S0022-3093(05)80239-X
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The growth of mu-c-Si prepared by alternating layer deposition (in growth conditions of a-Si:H) and hydrogen plasma exposure is studied by in situ spectroellipsometry. The deposition and etching sequences are clearly identified in the real time trajectories. More generally the influence of the etching by the hydrogen plasma is emphasized, in contrast with previous results.
引用
收藏
页码:791 / 794
页数:4
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