DEFECT-RELATED BREAKDOWN AND CONDUCTION IN SIO2

被引：5

作者：

SHATZKES, M

AVRON, M

GDULA, RA

机构：

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1980年 / 24卷 / 04期

关键词：

D O I：

10.1147/rd.244.0469

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：469 / 479

页数：11

共 29 条

[1]

AVRON M, 1979, 11TH P INT C SEM DEV

[2]

AVRON M, 1978, PHYSICS SIO2 ITS INT, P45

[3] BARRIER INHOMOGENEITIES ON A SI-SIO2 INTERFACE BY SCANNING INTERNAL PHOTOEMISSION [J].

DISTEFAN.TH .

APPLIED PHYSICS LETTERS, 1971, 19 (08) :280-&

[4] DIELECTRIC BREAKDOWN INDUCED BY SODIUM IN MOS STRUCTURES [J].

DISTEFANO, TH .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :527-528

[5]

DISTEFANO TH, 1975, 4 ARPA NBS WORKSH GA

[6] SODIUM MOBILITY IN IRRADIATED SIO2 [J].

FOWKES, FM ;

WITHERELL, FE .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (06) :67-72

[7]

FRANZ W, 1956, HDB PHYSIK, V17, P115

[8]

FRITZSCHE C, 1967, Z ANGEW PHYSIK, V24, P48

[9] INFLUENCE OF SILICON HEAT-TREATMENTS ON MINORITY-CARRIER GENERATION AND DIELECTRIC-BREAKDOWN IN MOS STRUCTURES [J].

GREEN, JM ;

OSBURN, CM ;

SEDGWICK, TO .

JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (02) :579-599

[10] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].

GROVE, AS ;

DEAL, BE ;

SNOW, EH ;

SAH, CT .

SOLID-STATE ELECTRONICS, 1965, 8 (02) :145-+

← 1 2 3 →